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RON vs Vds
See, for instance, ------------------------ Dave (Nick) Daniel KC0WJN ------------------------ On Thu, Dec 19, 2024 at 14:44 abanindra.kumarmandal.ece24 via groups.io <abanindra.kumarmandal.ece24=heritageit.edu.in@groups.io> wrote:
|
On 19/12/2024 20:43,
abanindra.kumarmandal.ece24@... wrote:
If I want to plot RON vs Vds is nmos in ltspice... Should I do d(Vds)/d(Id) or VDS/ID?... Please help as whether RON is a large signal parameter or small signal?You should use d(Vds)/d(Id) because it is a non-linear function. -- Regards, Tony |
On Thu, Dec 19, 2024 at 09:41 PM, <abanindra.kumarmandal.ece24@...> wrote:
Even in the FET's linear region, it is nonlinear. It is unlikely that a JFET or MOSFET has an Rds that is actually linear, in the so-called linear region. It "bends", even there.
But if you found a FET whose Rds was strictly linear, then there would be no difference between small-signal and large-signal Rds.
Andy
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I suppose that Rds depends on die temperature,
too, so large signal Rds is a thicket, not a value. On 2024-12-20 12:25, Andy I via
groups.io wrote:
-- OOO - Own Opinions Only Best Wishes John Woodgate Keep trying |
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