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RON vs Vds
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			 See, for instance,  ------------------------ Dave (Nick) Daniel KC0WJN ------------------------ On Thu, Dec 19, 2024 at 14:44 abanindra.kumarmandal.ece24 via groups.io <abanindra.kumarmandal.ece24=heritageit.edu.in@groups.io> wrote: 
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			 On 19/12/2024 20:43,
      abanindra.kumarmandal.ece24@... wrote: 
    If I want to plot RON vs Vds is nmos in ltspice... Should I do d(Vds)/d(Id) or VDS/ID?... Please help as whether RON is a large signal parameter or small signal?You should use d(Vds)/d(Id) because it is a non-linear function. -- Regards, Tony  | 
	
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			 On Thu, Dec 19, 2024 at 09:41 PM, <abanindra.kumarmandal.ece24@...> wrote: 
 Even in the FET's linear region, it is nonlinear.  It is unlikely that a JFET or MOSFET has an Rds that is actually linear, in the so-called linear region.  It "bends", even there. 
But if you found a FET whose Rds was strictly linear, then there would be no difference between small-signal and large-signal Rds. 
Andy 
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			 I suppose that Rds depends on die temperature,
        too, so large signal Rds is a thicket, not a value. On 2024-12-20 12:25, Andy I via
      groups.io wrote: 
    
 -- OOO - Own Opinions Only Best Wishes John Woodgate Keep trying  | 
	
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